研究業績

最近５年間の主たる論文

  • T. Oikawa, K. Ohdaira, K. Higashimine, and H. Matsumura, "Application of crystalline silicon surface oxidation to silicon heterojunction solar cells", Current Appl. Phys. 15, 1168-1172 (2015). (DOI:10.1016/j.cap.2015.07.004)
  • S. Tsuzaki, K. Ohdaira, T. Oikawa, K. Koyama, and H. Matsumura, "Improvement in passivation quality and open-circuit voltage in silicon heterojunction solar cells by the catalytic doping of phosphorus atoms", Jpn. J. Appl. Phys. 54, 072301-1-5 (2015), (DOI: http://dx.doi.org/10.7567/JJAP.54.072301)
  • H. Matsumura, K. Higashimine, K. koyama, and K. Ohdaira, “Comparison of Crystalline-Silicon/Amorphous-Silicon Interface Prepared by Plasma Enhanced Chemical Vapor Deposition and Catalytic Chemical Vapor Deposition”, J. Vac. Sci. Tech. B, vol.33, [no.3], pp.031201-1-4, (2015). (http://dx.doi.org/10.1116/1.4915494)
  • T.C. Thi, K. Koyama, K. Ohdaira, and H. Matsumura, “Effect of hydrogen on passivation quality of SiNx/Si-rich SiNx stacked layers deposited by catalytic chemical vapor deposition on c-Si wafers”, Thin Solid Films, vol.575, pp.60-63, (2015). (DOI:10.1016/j.tsf.2014.10.016)
  • T. Ohta, K. Koyama, K. Ohdaira, and H. Matsumura, “Low temperature boron doping into crystalline silicon by boron-containing species generated in Cat-CVD apparatus”, Thin Solid Films, vol.575, pp.92-95, (2015). (DOI:10.1016/j.tsf. 2014.10.017)
  • H. Matsumura, T. Hayakawa, T. Ohta, Y. Nakashima, M. Miyamoto, Trinh Cham Thi, K. Koyama, and K. Ohdaira, “Cat-doping: Novel method for phosphorus and boron shallow doping in crystalline silicon at 80 °C”, J. Appl. Phys., vol. 116, [no.11], pp. 114502 -1−10, (2014). (DOI: http://dx.doi.org/10.1063/1.4895635)
  • Trinh Cham Thi, K. Koyama, K. Ohdaira, and H. Matsumura, “Drastic reduction in the surface recombination velocity of crystalline silicon passivated with Cat-CVD SiNx films by introducing phosphorous Cat-doped layer”, J. Appl. Phys., vol. 116, [no.4], pp. 044510 -1−7, (2014) (DOI: http://dx.doi.org/10.1063/1.4891237)
  • Trinh Cham Thi, K. Koyama, K. Ohdaira, and H. Matsumura, “Passivation Quality of A Stoichiometric SiNx Single Passivation Layer on Crystalline Silicon Prepared by Cat-CVD and Successive Annealing”, Jpn. J. Appl. Phys., vol.53, pp.022301-1−5, (2014). (DOI: 10.7567/JJAP.53.022301)
  • K. Higashimine, K. Koyama, K. Ohdaira, H. Matsumura, and N. Otsuka，“Scanning transmission electron microscope analysis of amorphous-Si insertion layers prepared by catalytic chemical vapor deposition, causing low surface recombination velocities on crystalline silicon wafers”、J. Vac. Sci. Technol. B，30，031208，(2012). (DOI: 10.1116/1.4706894)
  • Trinh Cham Thi, Koichi Koyama, Keisuke Ohdaira, and Hideki Matsumura、“Passivation Property of SiNx/a-Si and SiNx/Si-rich SiNx Stacked Layers on Crystalline Silicon”, Solar. Energy Materials and Solar. Cells，100，169, (2012). (DOI: 10.1016/j.solmat.2012.01.010)
  • Taro Hayakawa, Yuki Nakashima, Koichi Koyama, Keisuke Ohdaira, and Hideki Matsumura, “Distribution of Phosphorus Atoms and Carrier Concentrations in Single-Crystal Silicon Doped by Catalytically Generated Phosphorous Radicals”, Jpn. J. Appl. Phys.，51，061301，(2012).　（DOI: 10.1143/JJAP.51.061301）
  • Taro Hayakawa, Tatsunori Ohta, Yuki Nakashima, Koichi Koyama, Keisuke Ohdaira, and Hideki Matsumura, “Effect of Radical-Doped n+ Back Surface Field Layers on the Effective Minority Carrier Lifetimes of Crystalline Silicon with Amorphous Silicon Passivation Layers Deposited by Catalytic Chemical Vapor Deposition”, Jpn. J. Appl. Phys., 51, 101301, (2012). (DOI：10.1143/JJAP.51.　101301)
  • K. Koyama, T. Goto, K. Ohdaira, and H. Matsumura，”Study on Light-Soaking Degradation and Damp Heat Tests for Cat-CVD SiNx/a-Si Stacked Passivation Films Realizing Extremely Low Surface Recombination Velocity“, Proc. 27th European Photovoltaic Solar Energy Conference and Exhibition, pp.2007-2009, (2012)
  • H. Matsumura, K. Katoh, K. Koyama, K. Ohdaira，”Surface Passivation on Crystalline Silicon with Low Optical Reflectivity and Low Surface Recombination Velocity”, Technical Digest of the 22nd International Photovoltaic Science and Engineering Conference, P-1-24, (2012)
  • T. Ohta, K. Koyama, K. Ohdaira, and H. Matsumura,” Low Temperature Doping of P and B atoms into Crystalline Si by Catalytically Generated Species from PH3 and B2H6”, Technical Digest of the 22nd International Photovoltaic Science and Engineering Conference，P-1-40, (2012)
  • Kosei Sato, Toshinori Kokubu, and Kensuke Nishioka, “Control of Pore Size of High Purity Nanoporous Silica Formed from Volcanic Ash Deposit Shirasu”, Advanced Materials Research, 622-633, pp.970-974, (2013). (DOI：10.4028/AMR. 622-623.970 )
  • Takuya Ito, Takuya Matumoto, and Kensuke Nishioka, “Improvement of Electrical Properties of Silicon Oxide Thin Film with Ultraviolet and Organic Gas Assisted Annealings”, Surface and Coatings Technology, 215, pp.447-451, (2013). (DOI：10.1016/j.surfcoat.2012.09.060)
  • Koichi Higashimine, Koichi Koyama, Keisuke Ohdaira, Hideki Matsumura, and N. Otsuka，” Scanning transmission electron microscope analysis of amorphous-Si insertion layers prepared by catalytic chemical vapor deposition, causing low surface recombination velocities on crystalline silicon wafers”，J. Vac. Sci. Tech. B 30, 031208 (2012) (DOI: 10.1116/1.4706894)
  • T. Hayakawa, Y. Nakashima, M. Miyamoto, K. Koyama, K. Ohdaira, and H. Matsumura, "Low Temperature Phosphorus Doping in Silicon Using Catalytically Generated Radicals", Jpn. J. Appl. Phys. ,50, 121301, (2011), (DOI: 10.1143/JJAP. 50.121301)
  • H. Matsumura, T. Hasegawa, S. Nishizaki, and K. Ohdaira, "Advantage of Plasma-Less Deposition in Cat-CVD to the Performance of Electronic Devices", Thin Solid Films, 519, 4568, (2011), (DOI: 10.1016/j.tsf.2011.01.302)
  • K. Koyama, K. Ohdaira, and H. Matsumura, "Excellent passivation effect of Cat-CVD SiNx/i-a-Si stack films on Si substrates", Thin Solid Films, 519, 4473, (2011). (DOI: 10.1016/j.tsf.2011.01.294)
  • T. Hayakawa, M. Miyamoto, K. Koyama, K. Ohdaira, and H. Matsumura, "Extremely Low Recombination Velocity on Crystalline Silicon Surfaces Realized by Low-Temperature Impurity Doping in Cat-CVD Technology", Thin Solid Films, 519, 4466, (2011). (DOI: 10.1016/j.tsf.2011.01.301)
  • N. T. T. Kieu, K. Ohdaira, T. Shimoda, and H. Matsumura, "Low Resistivity Metal Lines Formed by Functional Liquids and Successive Treatment of Catalytically Generated Hydrogen Atoms in Cat-CVD System", Thin Solid Films, 519, 4565, (2011). (DOI: 10.1016/j.tsf.2011.01.303)
  • K. Nishioka, T. Sueto, K. Yoshino, and N. Saito,“Water-Repellent Silicon Surface with Nanostructure Formed by Catalysis of Single Nanosized Silver Particle”, :Jpn. J. Appl. Phys., 50, 128003, (2011). (DOI: 10.1143/JJAP.50.128003)
  • Y. Ogita, M. Tachihara, Y. Aizawa, N. Saito, “Ultra-low Surface Recombination in p-Si Passivated by Catalytic Vapor Deposited Alumina films”, Thin Solid Films, 519, 4469, (2011) (DOI: 10.1016/j.tsf.2011.01.307)
  • H. Matsumura, T. Hasegawa, S. Nishizaki, and K. Ohdaira, “Advantage of Plasma-　Less Deposition in Cat-CVD to the Performance of Electronic Devices”, Thin Solid Films, 519, 4568 (2011) (DOI: 10.1016/j.tsf.2011.01.302)
  • H. Matsumura, M. Miyamoto, K. Koyama, and K. Ohdaira、”Drastic Reduction in Surface Recombination Velocity of Crystalline Silicon by Surface Treatment Using Catalytically-Generated Radicals”, Sol. Energy Mater. Sol. Cells，95，pp.797-799，(2011) (DOI:10.1016/j.solmat.2010.08.034)

査読付き学術論文295編（学術誌掲載論文178編、和文学術誌掲載論文29編、査読付き国際会議Proceedings論文88編の合計）、その他、学術研究会資料（春秋の学会講演は除く）106編があり、総合計401編の論文を発表。