論文 (Refereed Journal Articles)

1. “Impact of annealing environment on electrical properties of yttrium-doped hafnium zirconium dioxide thin films prepared by the solution process”
   Mohit, Tatsuya Murakami, Ken-ichi Haga, and Eisuke Tokumitsu,
   Japanese Journal of Applied Physics, Vol. 59, SPPB03 (2020)
   論文PDF (Article PDF)

2. “Electrical properties of yttrium-doped hafnium-zirconium dioxide thin films prepared by solution process for ferroelectric gate insulator TFT application”
   Mohit, Ken-ichi Haga, and Eisuke Tokumitsu,
   Japanese Journal of Applied Physics, Vol. 59, SMMB02 (2020)
   論文PDF (Article PDF)

3. “A simple analysis of polarization reversal of ferroelectric capacitor demonstrating negative capacitance-like behavior”
   Eisuke Tokumitsu,
   Japanese Journal of Applied Physics, Vol. 59, SCCB06 (2020)
   論文PDF (Article PDF)

4. “Electrical properties of In2O3 and ITO thin films formed by solution process using In(acac)3 precursors”
   Puneet Jain, Yuji Nakabayashi , Ken-ichi Haga, and Eisuke Tokumitsu,
   Japanese Journal of Applied Physics, Vol. 59, SCCB12 (2020)
   論文PDF (Article PDF)

国際学会 (International Conference)

1. “Robustness of Ferroelectricity in Hafnium- Zirconium Dioxide Films Deposited By Sputtering and Chemical Solution Deposition for Ferroelectric Transistor Applications”
   Mohit, S. Migita, H. Ota, Y. Morita, and E. Tokumitsu, PRiME (Pacific Rim Meeting on Electrochemical & Solid State Science) 2020, October 4-9, 2020, online, paper D01-1371

2. “Fabrication of Indium-Tin-Oxide Channel Ferroelectric-Gate Thin Film Transistors using Yttrium Doped Hafnium-Zirconium Dioxide by Chemical Solution Process”
   Mohit, Takaaki Miyasako and Eisuke Tokumitsu, 2020 International Conference on Solid State Devices and Materials, September 27-30, 2020. On-line, paper J-2-04

国内学会 (Domestic Conference)

1. “Ferroelectric Properties of Hafnium-Zirconium-Dioxide Prepared by Chemical Solution Process for MFM and MFS Structures”
   Mohit，Eisuke Tokumitsu,
   第81回応用物理学会秋季学術講演会 (The 81st JSAP Fall Meeting) 2020年9月8日~11日, 10a-Z24-6 オンライン
   口頭発表 (Oral)　

2. “Effect of Annealing Environment on Ferroelectric Properties of Hf-Zr-O (HZO) Thin Films Prepared by Solution Process”
   Mohit，Ken-Ichi Haga，Eisuke Tokumitsu,
   第37回強誘電体会議、2020年5月27日～30日、京都、30am-01 オンライン
   口頭発表 (Oral)　

3. “Fabrication of ferroelectric hafnium-zirconium dioxide thin films by solution process”
   Mohit, Jyotish Patidar, Ken-Ichi Haga1 Eisuke Tokumitsu,
   第67回応用物理学会春季学術講演会(The 67th JSAP Spring Meeting)、2020年3月12日~15日、14p-A303-4

4. “強誘電体ゲート酸化物チャネル薄膜トランジスタとメモリ応用”
   徳光永輔,
   第67回応用物理学会春季学術講演会、2020年3月12日~15日、14a-A401-1 （招待講演）