徳光研究室

2019

論文 (Refereed Journal Articles)

  1. “Electrical and patterning properties of direct nanoimprinted indium oxide (In2O3) and indium thin oxide (ITO)”
    Puneet Jain, Chang Su, Ken-ichi Haga, and Eisuke Tokumitsu,
    Japanese Journal of Applied Physics, Vol. 58, SDDJ05 (2019)

国際学会 (International Conference)

  1. “Conductive-Oxide-Channel Thin Film Transistor Realized by Ferroelectric Gate Insulator”
    E. Tokumitsu, 2019 Collaborative Conference on Materials Research (CCMR), June 3-7, 2019, Gyeonggi Goyang/Seoul, South Korea

  2. “Hall Mobility and Carrier Concentration of In(acac)3 Precursor Derived Solution Processed In2O3 and ITO Thin Films”
    Puneet Jain, Ken-ichi Haga, and Eisuke Tokumitsu, The 7th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2019), June 19-22, 2019, Nagano paper P2-34.

  3. “A Simple Analysis of Polarization Reversal of Ferroelectric Capacitor Demonstrating Negative-Capacitance-like Behavior”
    Puneet Jain, Ken-ichi Haga, and Eisuke Tokumitsu, The 7th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2019), June 19-22, 2019, Nagano paper P2-14.

  4. “Preparation of Ferroelectric Yttrium-doped Hafnium-Zirconium Dioxide Thin Films by Solution Process”
    Mohit, Ken-ichi Haga, and Eisuke Tokumitsu, 2019 International Wiorkshop on Dielectric Thin Films for Future Electron Devices: Science and Technology, 2019 Nov.18-20, Tokyo, paper P-17.

  5. “Switching Parameter Dependence on Negative-capacitance Behavior of RC Circuit with Ferroelectric Capacitor”
    Mohit, Ken-ichi Haga, and Eisuke Tokumitsu, 2019 International Wiorkshop on Dielectric Thin Films for Future Electron Devices: Science and Technology, 2019 Nov.18-20, Tokyo, paper S3-2.

  6. “In2O3-based thin film transistor fabricated by direct nanoimprinting”
    Eisuke Tokumitsu, Materials Research Meeting 2019, Dec. 10-14, Yokohama, Japan. Paper H3-11O09.

国内学会 (Domestic Conference)

  1. “Sub-20 nm Thick Ferroelectric Hf-Zr-O Films Fabricated by Solution Process for Ferroelectric-gate TFT Applications”
    モヒート、住友誠明、羽賀健一、大平圭介、徳光永輔
    薄膜材料デバイス研究会第16回研究集会 08P03、2019年11月8日~9日、龍谷大学響都ホール校友会館（京都市）