論文 (Refereed Papers)

2014
“Rheology printing for metal-oxide patterns and devices”
Toshihiko Kaneda, Daisuke Hirose, Takaaki Miyasako, Phan Trong Tue, Yoshitaka Murakami, Shinji Kohara, Jinwang Li, Tadaoki Mitani, Eisuke Tokumitsu, and Tatsuya Shimoda
Journal of Materials Chemistry C, Vol. 2, Issue 1, pp. 40-49 (2014)

2013
“Unipolar behavior in grapheme-channel field-effect-transistors with n-type doped SiC source/drain regions”
Yuichi Nagahisa, Yuichi Harada, and Eisuke Tokumitsu
Applied Physics Letters, Vol.103, 223503 (2013)

“High-performance solution-processed ZrInZnO thin-film transistors”
Phan Trong Tue, Takaaki Miyasako, Jinwang Li, Huynh Thi Cam Tu, Satoshi Inoue, Eisuke Tokumitsu, and Tatsuya Shimoda
IEEE Transactions on Electron Devices, Vol. 60, No. 1, pp. 320-326 (2013)

2012
“Highly conductive p-type amorphous oxides from low-temperature solution processing”
Jinwang Li, Eisuke Tokumitsu, Mikio Koyano, Tadaoki Mitani, and Tatsuya Shimoda
Applied Physics Letters, Vol. 101, 132104 (2012)

“Electric Properties and Interface Charge Trap Density of Ferroelectric Gate Thin Film Transistor Using (Bi,La)₄Ti₃O₁₂/Pb(Zr,Ti)O₃ Stacked Gate Insulator”
Pham Van Thanh, Bui Nguyen Quoc Trinh, Takaaki Miyasako, Phan Trong Tue, Eisuke Tokumitsu, and Tatsuya Shimoda
Japanese Journal of Applied Physics, Vol. 51, 09LA09 (2012)

“P-type conductive amorphous oxides of transition metals from solution processing”
Jinwang Li, Toshihiko Kaneda, Eisuke Tokumitsu, Mikio Koyano, Tadaoki Mitani, and Tatsuya Shimoda
Applied Physics Letters, No. 101, 052102 (2012)

“Evaluation of Channel Modulation in IN₂O₃/(Bi,La)₄Ti₃O₁₂ Ferrolectric-Gate Thin Film Transistors by Capacitance-Voltage Measurements”
Eisuke Tokumitsu & Kazuya Kikuchi
Ferroelectrics, 429:1, 15-21, pp. 305-311 (2012)

“Suppression of Hole Current in Graphene Transistors with N-Type Doped SiC Source/Drain Regions”
Yuichi Nagahisa, Eisuke Tokumitsu
Materials Science Forum, Vol. 717-720, pp. 679-682, (2012)

“Crystallization of lead zirconate titanate without passing through pyrochlore by new solution process”
Hiroyuki Kameda, Jinwang Li, Dam Hieu Chi, Ayumi Sugiyama, Koich Higashimine, Tomoya Uruga, Hajime Tanida, Kazuo Kato, Toshihiko Kaneda, Takaaki Miyasako, Eisuke Tokumitsu, Tadaoki Mitani, Tatsuya Shimoda
Journal of the European Ceramic Society, Vol. 32, Issue 8, pp. 1667-1680, (2012)

2011
“A 60 nm channel length ferroelectric-gate field-effect transistor capable of fast switching and multilevel programming”
Yukihiro Kaneko, Yu Nishitani, Michihito Ueda, Eisuke Tokumitsu, and Eiji Fujii
Applied Physics Letters, Vol. 99, 182902 (2011)

“Correlated motion dynamics of electron channels and domain walls in a ferroelectric-gate thin-film transistor consisting of a ZnO/Pb(Zr,Ti)O₃ stacked structure”
Yukihiro Kaneko, Yu Nishitani, Hiroyuki Tanaka, Michihito Ueda, Yoshihisa Kato, Eisuke Tokumitsu, and Eiji Fujii
Journal of Applied Physics, Vol. 110, No. 8, 084106 (2011)

“Multiagent Strategic Interaction Based on a Game Theoretical Approach to Polarization Reversal in Ferroelectric Capacitors”
Dan Ricinschi and Eisuke Tokumitsu
Journal of Advanced Computational Intelligence and Intelligent Informatics, Vol. 15, No. 7, pp. 806-812 (2011)

“Low-voltage Operation of Ferroelectric Gate Thin Film Transistors Using Indium Gallium Zinc Oxide-Channel and Ferroelectric Polymer Poly(vinylidene fluoride-trifluoroethylene)”
Gwang-Geun Lee, Yoshihisa Fujisaki, Hiroshi Ishiwara, and Eisuke Tokumitsu
Applied Physics Express, Vol. 4, No. 9, 091103, (2011)

“The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene)”
Gwang-Geun Lee, Eisuke Tokumitsu, Sung-Min Yoon, Yoshihisa Fujisaki, Joo-Won Yoon, and Hiroshi Ishiwara
Applied Physics Letters Vol.99, No.1, 012901-1-3, (2011)

“Lanthanum Oxide Capping Layer for Solution-processed Ferroelectric-gate Thin-film Transistors”
Tue T. Phan, Trinh Q. Bui Nguyen, Takaaki Miyasako, Thanh V. Pham, Eisuke Tokumitsu
2011 Spring meeting, Materials Research Society Symp. Proc. 1337, Q02-05, Published online by Cambridge University Press 12, (San Francisco, April 25-29), (2011)

“Analysis on Interface Layer Between Pt Electrode and Ferroelectric Layer of Solution-processed PZT Capacitor”
Thanh V. Pham, Quoc Trinh N. Bui, Tue T. Phan, Takaaki Miyasako, Eisuke Tokumitsu and Tatsuya Shimoda
2011 Spring meeting, Materials Research Society Symp. Proc. 1368, WW08-11, Published online by Cambridge University Press 12, (San Francisco, April 25-29), (2011)

“Ferroelectric-Gate Thin-Film Transitor Fabricated by Total Solution Deposition Process”
Takaaki Miyasako, Bui Nguyen Quoc Trinh, Masatoshi Onoue, Toshihiko Kaneda, Phan Trong Tue, Eisuke Tokumitsu, and Tatsuya Shimoda
Japanese Journal of Applied Physics, Vol. 50, 04DD09 (2011)

2010
“Optimization of Pt and PZT Films for Ferroelectric-Gate Thin Film Transistors”
PHAN TRONG TUE, TAKAAKI MIYASAKO, BUI NGUYEN QUOC TRINH, JINWANG LI, EISUKE TOKUMITSU, AND TATSUYA SHIMODA
Ferroelectrics, 405:281-291, (2010)

“Totally solution-processed feerroelectric-gate thin-film transistor”
Takaaki Miyasako, Bui Nguyen Quoc Trinh, Masatoshi Onoue, Toshihiko Kaneda, Phan Trong Tue, Eisuke Tokumitsu, and Tatsuya Shimoda
Applied Physics Letters, Vol. 97, No. 17, 173509 (2010)

“Improvement of Sol-Gel Derived PbZr_xTi_1-xO₃ Film Properties Using Thermal Press Treatment”
Toshihiko Kaneda, Joo-Nam Kim, Eisuke Tokumitsu and Tatsuya Shimoda
Japanese Journal of Applied Physics, Vol. 49, pp.09MA08-1-3 (2010)

“A low-temperature crystallization path for device-quality ferroelectric films”
Jinwan Li, Hiroyuki Kameda, Bui Nguyen Quoc Trinh, Takaaki Miyasako, Phan Tron Tue, Eisuke Tokumitsu, Tadaoki Mitani and Tatsuya Shimoda
Applied Physics Letters, Vol. 97, Issue 10, 102905 (2010)

“Fabrication of IGZO and In₂O₃-Channel Ferroelectric-Gate Thin Film Transistors”
Eisuke Tokumitsu and Tomohiro Oiwa
Mater. Res. Soc. Symp. Proc. Vol. 1250, 1250-G13-07, pp. 145-150 (2010)

“Impact of interface controlling layer of Al₂O₃ for improving the retention behaviors of In-Ga-Zn ocide-based ferroelectric memory transistor”
Sung-Min Yoon, Shin-Hyuk Yang, Soon-Won Jung, Chun-Won Byun, Sang-Hee Ko Park, Chi-Sun Hwang, Gwang-Geun Lee, Eisuke Tokumitsu, and Hiroshi Ishiwara
Applied Physics Letters Vol. 96, 232903, (2010)

“Electric field effects on radiative transition in quantum dot inorganic electroluminescent devices”
Yuki Tani, Satoshi Kobayashi, and Eisuke Tokumitsu
IEICE Electronics Express, Vol. 7, No. 4, pp. 288-294 (2010)

2009
“Flexible high-performance amorphous InGaZnO₄-TFTs utilizing excimer laser annealing”
Mitsuru Nakata, Kazushige Takechi, Eisuke Tokumitsu, Hirotaka Yamaguchi, and Setsuo Kaneko
Japanese Journal of Applied Physics, Vol. 48, No.8, pp.081607 (2009)

“Effects of thermal annealing on ZnO-TFT characteristics and the application of excimer laser annealing to plastic-based ZnO-TFTs”
Mitsuru Nakata, Kazushige Takechi, Toshimasa Eguchi, Eisuke Tokumitsu, Hirotaka Yamaguchi, and Setsuo Kaneko
Japanese Journal of Applied Physics, Vol. 48, No.8, pp.081608 (2009)

“Anomalously High Channel Mobility in SiC MOSFET with Al₂O₃/SiO_x/SiC Gate Structure”
Shiro Hino, Tomohiro Hatayama, Jun Kato, Naruhisa Miura, Tatsuo Oomori, and Eisuke Tokumitsu
Materials Science Forum, Vols. 600-603 (2009), pp. 683-686 (2009)

“Improvement of InGaZnO₄ Thin Film Transistors Characteristics Utilizing Excimer Laser Annealing”
Mitsuru Nakata, Kazushige Takechi, Kazufumi Azuma, Eisuke Tokumitsu, Hirota Yamaguchi, and Setsuo Kaneko
Applied Physics Express 2, pp.021102-1~3, (2009)

“Fabrication and Characterization of ITO/BZN Thin Film Transistors”
Eisuke Tokumitsu and Yohei Kondo
Journal of the Korean Physical Society, Vol. 54, No. 1, pp. 539-543 (2009)

2008
“Remarkable Increase in the Channel Mobility of SiC-MOSFETs by Controlling the Interfacial SiO₂ Layer Between Al₂O₃ and SiC”
Tomohiro Hatayama, Shiro Hino, Naruhisa Miura, Tatuo Oomori, and Eisuke Tokumitsu
IEEE Transactions on Electron Devices, Vol. 55, No. 8, pp. 2041-2045 (2008)

“High channel mobility 4H-SiC metal-oxide-semiconductor field-effect transistor with low temperature metal-organic chemical-vapor deposition grown Al₂O₃ gate insulator”
S. Hino, T. Hatayama, J. Kato, E. Tokumitsu, N. Miura, and T. Oomori
Applied Physics Letters, Vol. 92, 183503 (2008)

2007
“Fabrication and Charactarization of 4H-SiC MOSFET with MOCVD-grown Al₂O₃ Gate Insulator”
Shiro Hino, Tomohiro Hatayama, Naruhisa Miura, Tatsuo Oomori, and Eisuke Tokumitsu
Materials Science Forum, Vol.556-557, pp. 787-790 (2007)

“Fabrication and Characterization of M-I-FIS ferroelectric-gate structures using HfAlO_x buffer layer”
Eisuke Tokumitsu, Y.Takano, H.Shibata, and H.Saiki
Journal of Microelectronic Engineering, Vol.84, pp. 2018-2021 (2007)