堀田 將の過去の論文リスト
2014年3月31日現在
|
Year/Month |
Authour |
Title |
Journal, Vol., No,
Page |
|
2014/1/31 Online |
Susumu Horita and Tetsuya Akahori |
Effect of
Crystallization-Induction Layer of Yttria-Stabilized
Zirconia on Solid State Crystallization of an Amorphous Si Film |
Jpn. J. Appl. Phys.，Vol. 53，No. 3, pp.030303,1-4. |
|
2014/2/6 Online |
Mai Thi Kieu Lien and Susumu Horita |
Raman Spectra
Analysis of Si Films Solid-Phase-Crystallized on Glass Substrates by Pulse
Laser with Crystallization-Induction Layers of Yttria-Stabilized
Zirconia |
Jpn. J. Appl. Phys.，Vol. 53，No. 3S1, pp.03CB01,1-7. |
|
2010/10 |
Susumu Horita and Sukreen Hana |
Low-Temperature
Crystallization of Silicon Films Directly Deposited on Glass Substrates
Covered with Yttria-Stabilized Zirconia Layers |
Jpn. J. Appl. Phys.，Vol. 49，No. 10，pp.105801,1-11. |
|
2009/12 |
S. Horita
and B. N. Q. Trinh |
Disturb-Free Writing
Operation for Ferroelectric Gate Field-Effect Transistor Memories with
Intermediate Electrodes |
IEEE Transaction on
Electron Devices, Vol. 56，No. 12，pp. 3090-3096. |
|
2009/8 |
S. Hana, K. Nishioka, and S. Horita |
Enhancement of the
crystalline quality of reactively sputtered yttria-stabilized
zirconia by oxidation of the metallic target surface |
Thin Solid Films,
Vol. 517, Issue 20, pp.5830-5836. |
|
2009/4 |
S. Horita and H. Sukreen |
Low Temperature
Deposition and Crystallization of Silicon Film on an HF-etched
Polycrystalline Yttria-Stabilized Zirconia Layer
Rinsed with Ethanol Solution |
Appl. Phys. Express,
Vol. 2 , No .4, pp. 04120-1,3. |
|
2009/3 |
S. Horita, K. Toriyabe, and K. Nishioka |
Low-Temperature
Deposition of Silicon Oxide Film from the Reaction of Silicone Oil Vapor and
Ozone Gas |
Jpn. J. Appl. Phys.,
Vol. 48, No. 3, pp. 035501-1,7. |
|
2008/ |
K. Nishioka, S. Horita, K. Ohdaira, and H. Matsumura |
Antireflection subwavelength structure of silicon surface formed by wet
process using catalysis of single nano-sized gold
particle |
Solar Energy
Materials & Solar Cells, Vol. 92, pp. 919-922. |
|
2008/ |
K. Nishioka and S. Horita |
Periodic arrays of
submicron Si and Ni dots on SiO2 fabricated using linearly
polarized Nd:YAG pulsed laser |
Appl. Phys. A, Vol.
91, pp. 235-240. |
|
2008/11 |
S. Horita
and B. N. Q. Trinh |
Nondestructive
Readout of Ferroelectric-Gate Field-Effect Transistor Memory with an
Intermediate Electrode by Using an Improved Operation Method |
IEEE Transaction on
Electron Devices, Vol. 55, No. 11, pp. 3200-3207. |
|
2007/7 |
K. Nishioka and S. Horita |
Periodically Aligned
Submicron Lines of Silicon and Nickel Fabricated by Linearly Polarized Nd:YAG Pulse Laser |
Jpn. J. Appl. Phys.,
Vol. 46, No. 7A, pp. 4154-4159. |
|
2007/7 |
S. Horita, H. Kaki, and K. Nishioka |
Surface modification
of an amorphous Si thin film crystallized by a linearly polarized Nd:YAG pulse laser beam |
J. Appl. Phys., Vol. 102, No. 1 pp. 013501-1 -013501-10. |
|
2007/6 |
K. Nishioka and S. Horita |
Periodically Aligned
Submicron Dots of Silicon and Nickel Fabricated by Linearly Polarized Nd:YAG Pulse Laser |
Jpn. J. Appl. Phys.,
Vol. 46 , No. 23, pp. L556-L558. |
|
2007/6 |
S. Horita, H. Kaki, and K. Nishioka |
Multi-Reflection
Effect on Formation of Periodic Surface Structure on an Si Film
Melting-Crystallized by a Linearly Polarized Nd:YAG
Pulse Laser Beam |
Jpn. J. Appl. Phys.,
Vol. 46, No. 6A, pp. 3527-3533. |
|
2006/ |
S. Horita, K. Kanazawa, K. Nishioka,
K. Higashimine, and M. Koyano |
Fabrication of
Crystallized Si Film Deposited on a Polycrystalline YSZ Film/Glass Substrate
at 500°C |
Mat. Res. Soc. Symp. Proc., Vol. 910, pp. 577-581(0910-A21-17). |
|
2006/ |
K. Nishioka and S. Horita |
Periodic Alignment
of Silicon Dot Fabricated by Linearly Polarized Nd:YAG
Pulse Laser |
Mat. Res. Soc. Symp. Proc., Vol. 910, pp. 0910-A15-03. |
|
2006/11 |
B. N. Q. Trinh and S.
Horita |
Control of
Preferential Orientation of Platinum Films on RuO2/SiO2/Si
Substrates by Sputtering |
Jpn. J. Appl. Phys.,
Vol. 45, No. 11, pp. 8810-8816. |
|
2006/9 |
B. N. Q. Trinh and S.
Horita |
Operation of
Ferroelectric Gate Field-Effect Transistor Memory with Intermediate Electrode
using Polycrystalline Capacitor and Metal-Oxide-Semiconductor Field-Effect
Transistor |
Jpn. J. Appl. Phys.,
Vol. 45, No. 9B, pp. 7341-7344. |
|
2005/7 |
S. Okamoto, T.
Watanabe, K. Akiyama, S. Kaneko, H. Funakubo, and S.
Horita |
Epitaxial Pt Films
with Different Orientations Grown on (100)Si Substrates by RF Magnetron
Sputtering |
Jpn. J. Appl. Phys.,
Vol. 44, No. 7A, pp. 5102 - 5106. |
|
2005/1 |
H. Kaki and S. Horita |
Periodic
Grain-Boundary Formation in a Poly-Si Thin Film Crystallized by Linearly
Polarized Nd:YAG Pulse Laser with an Oblique
Incident Angle |
J. Appl. Phys., Vol.
97, No. 1, pp. 014904 1-9. |
|
2004/ |
H. Kaki, T. Ootani, and S. Horita |
Formation of
Periodic Grain Boundary in an Si Thin Film Crystallized by a Linearly
Polarized Nd:YAG Pulse Laser with an Ultra Sonic
Oscillator |
Mat. Res. Soc. Symp. Proc., Vol. 808, pp. 283-288. |
|
2004/ |
S. Horita and M. Shouga |
Influence of
Pre-Oxidation of an Ir Film on Chemical Composition
and Crystal Property of a PZT Film Deposited on the Ir
Film by Sputtering |
Mat. Res. Soc. Symp. Proc., Vol. 811, pp. D3.18.1-5. |
|
2004/ |
S. Seki, H. Tamura, S.
Horita, and N.Ito |
Enhanced scanning
ion microprobe image analysis for rough surface samples as an alternative to
SIMS depth profiling |
Surface and
Interface Analysis, Vol. 36, pp. 896-899. |
|
2004/5 |
Y. Nakata, H.Kaki, and S. Horita |
Influence of the
Beam Irradiation Conditions on an Si Film Melting-Crystallized by a Nd:YAG Pulse Laser Beam with Linear Polarization |
Jpn. J. Appl .Phys., Vol. 43, No. 5A, pp. 2630-2635. |
|
2004/5 |
T. D. Khoa and S. Horita |
Analysis on
Operation of a F-FET Memory with an Intermediate Electrode |
IEEE Transaction on
Electron Devices, Vol. 51, No. 5, pp. 820-823. |
|
2004/4 |
T. D. khoa and S. Horita |
Retention and Read
Endurance Characteristics of a Ferroelectric Gate
Field Effect Transistor Memory with an Intermediate Electrode |
Jpn. J. Appl. Phys, Vol. 43, No. 4B, pp. 2220-2225. |
|
2003/ |
S. Horita, S.Miyoshi, and O. Jyaike |
Influence of Crystallisation of a Growing Si Film on a Glass Substrate
by Thermal Electron Irradiation |
Solid State
Phenomena, Vol. 93, pp. 237-242. |
|
2003/ |
H. Kaki, Y.Nakata, and S. Horita |
Study on Grain Boundary Formation in an Si Film
Crystallized by Laser Induced Periodic Temperature
Distribution with a High Incident Angle |
Solid State
Phenomena, Vol. 93, pp. 355-360. |
|
2003/4 |
S. Horita, T.Toda, and H. Kasagawa |
Analysis of the
Interface between Epitaxial Ir and ZrN Films on Si as a Bottom Electrode for Ferroelectric
Capacitor |
J. Korean Physical
Society, Vol. 42, Supplement Issue, April, pp. S1142-S1145. |
|
2003/4 |
S. Horita and T. D. Khoa |
Gate Voltage
Reduction of a Ferroelectric Gate Field-Effect |
Jpn. J. Appl. Phys.,
Vol. 42, No. 4A, pp. L365 - L368. |
|
2002/ |
H. Kaki, Y. Nakata,
and S. Horita |
Numerical Analysis
for Lateral Grain Growth of Poly-Si Thin Films Controlled by Laser-Induced
Periodic Thermal Distribution |
Mat. Res. Soc. Symp. Proc., Vol. 715, pp. 211-216. |
|
2002/ |
Y. Nakata, H. Kaki
and S. Horita |
Influence of the
Beam Irradiation Condition with Oblique Incidence on Crystallization of an Silicon
Film by a Linearly Polarized Pulse Laser |
Mat. Res. Soc. Symp. Proc., Vol. 715, pp. 199-204. |
|
2002/ |
S. Horita, S. Horii, and |
Improvement of
Surface Crystalline Quality of an Epitaxial (100) ZrN
Film as a Bottom Electrode Diffusion Barrier for Ferroelectric Capacitors |
Mat. Res. Soc. Symp. Proc., Vol. 688, pp. 119-124. |
|
2002/ |
S. Horita, S. Sasaki, |
Ferroelectric
Properties of Epitaxial Bi4Ti3O12 Films Deposited on Epitaxial (100)Ir and (100)Pt Films on Si by Sputtering |
Vacuum, Vol. 66, No.
3/4, 427-433. |
|
2002/12 |
S. Horita and S.
Miyoshi |
Enhancement of
Crystallization of an Si Film on a Quartz Substrate by Thermal Electron
Irradiation |
Jpn. J. Appl. Phys.,
Vol. 41, No. 12A, pp. L1396 - L1398. |
|
2002/11 |
T. D. Khoa, S. Horii, and S. Horita |
High Deposition Rate
of Epitaxial (100) Iridium Film on (100)YSZ/(100)Si Substrate by RF
Sputtering Deposition |
Thin Solid Films,
Vol. 419, Issue 1-2, pp. 88-94. |
|
2002/11 |
S. Horita, T. Toda, and H. Kasagawa |
Epitaxial Growth of
a (101)Pb(ZrxTi1-x)03 Film on an Epitaxial (110)Ir/(100)ZrN/(100)Si Substrate
Structure |
Jpn. J. Appl. Phys.,
Vol. 41, No. 11B, pp. 6653-6657. |
|
2001/ |
S. Horii and S. Horita |
Suppression of
Oxidation of an Epitaxial (100)ZrN Film on Si
during the Deposition of the Ir Film |
Mat. Res. Soc. Symp. Proc., Vol. 655, pp. CC4.2.1-6. |
|
2001/ |
S. Horii, S.
Yokoyama, and |
Ferroelectric
Property of an Epitaxial PZT/Ir/ZrN/Si
Structure by Sputtering |
Proc. 2000 12th IEEE
Inter. Symp. on the Application of Ferroelectrics,
ISAF 2000, pp. 607-610, Honolulu, Hawaii. |
|
2001/11 |
S. Horita and T. Kuniya |
Increase of
Dielectric Constant of an Epitaxial (100) Yttria-Stabilized
Zirconia Film on (100) Si Substrate Deposited by Reactive Sputtering in the
Metallic Mode |
Jpn. J. Appl. Phys.,
Vol. 40, No. 11, pp. 6547- 6551. |
|
2001/9 |
S. Horii, T. Toda,
and |
HF and Hydrazine
Monohydrate Solution Treatment for Suppressing Oxidation of ZrN Film Surface |
Jpn. J. Appl. Phys.,
Vol. 40, No. 9A/B, pp. L976-L979. |
|
2001/6 |
S. Horita, S. Horii, |
Crystalline and Ferrroelectrical Properties of Heteroepitaxial
(100) and (111) Pb(ZrxTi1-x)O3 Films
on (100)Ir/(100)(ZrO2)1-x(Y2O3)x/(100)Si Structure |
Thin Solid Films,
Vol. 388, No. 1/2, pp. 260-270. |
|
2001/4 |
S. Horita, Y. Nakata, and |
Alignment of Grain
Boundary in an Si film Crystallized by a Linearly Polarized Laser Beam on a
Glass Substrate |
Appl. Phys. Lett., Vol. 78 , No. 15 , pp. 2250-2252. |
|
2000/ |
S. Horita, H. Nakajima, and K. Kuniya |
Improvement of the
electrical properties of heteroepitaxial yttria-stabilized zirconia films (YSZ) on Si prepared by
reactive sputtering |
Vacuum, Vol. 59, No. 2/3, pp. 390-396. |
|
2000/ |
S. Horii, S.
Yokoyama, and |
Heteroepitaxial Growth of Ir/ZrN Layered Electrode on
(100)Si Substrate for Ferroelectric Capacitor |
Mat. Res. Soc. Symp. Proc., Vol. 596, pp. 85-90. |
|
2000/8 |
S. Horita, M. Aikawa, and |
Low Temperature Heteroepitaxial Growth of a New Phase Lead Zirconate Titanate Film on Si
Substrate with an Epitaxial (ZrO2)1-x(Y2O3)x Buffer Layer |
Jpn. J. Appl. Phys.,
Vol. 39, No.8, pp. 4860-4868. |
|
2000/4 |
S. Horii, S.Yokoyama, |
Low Voltage
Saturation of Pb(ZrxTi1-x)O3
Films on (100)Ir/(100)(ZrO2)1-x(Y2O3)x/(100)Si
Substrate Structure Prepared by Reactive Sputtering |
Jpn. J. Appl. Phys.,
Vol. 39, No. 4B, pp. 2114-2118. |
|
1999/ |
S. Horita and S. Horii |
Heteroepitaxial Growth of PZT Film
on (100)Ir/(100)YSZ/(100)Si Substrate Structure
Prepared by Reactive Sputtering |
Mat .Res .Soc. Symp. Proc., Vol. 541, pp. 351-356. |
|
1999/ |
S. Horita, D. Inagaki, and |
Enhancement of
Crystallization of an Si Film on a Quartz Substrate by Electric Field |
Thin Solid Films,
Vol. 343-344, pp. 288-291. |
|
1999/10 |
S. Horita, S. Horii, and |
Material properites of heteroepitaxial
(001) and (111) PZT films on Si substrates prepared by sputtering |
The 1999 Joint
International Meeting (196 th Meeting of the
Electrochemical Society) in Hawaii, Abstract No.1044. |
|
1999/9 |
S. Horii, S.
Yokoyama, |
Thickness Dependence
of Material Properties of Epitaxial Pb(ZrxTi1-x)O3
Films on Ir/(100)(ZrO2)1-x(Y2O3)x/(100)Si
Structures |
Jpn. J. Appl. Phys.,
Vol. 38, No. 9B, pp. 5378-5382. |
|
1998/ |
S.Horita, M.Watanabe and A.Masuda |
Structure and
Electrical Properties of Yttria-Stabilized Zirconia
Films with Controlled Y Content Heteroepitaxially
Grown on Si by Reactive Sputtering |
Material Science
Engineering B, Vol. 54, No. 1-2, pp. 79-83. |
|
1998/12 |
S.Horita, M.Watanabe, S.Umemoto and A.Masuda |
Material Properties
of Heteroepitaxial Yttria-Stabilized
Zirconia Films with Controlled Yttria Contents on
Si Prepared by Reactive Sputtering |
Vacuum, Vol. 51, No
.4, pp. 609-613. |
|
1998/9 |
S. Horita, S. Horii, and |
Material Properties
of Heteroepitaxial Ir and
Pb(ZrxTi1-x)O3 Films on
(100)(ZrO2)1-x(Y2O3)x/(100)Si Structure Prepared by Sputtering |
Jpn. J. Appl. Phys.,
Vol. 37, No. 9B, pp. 5141-5144. |
|
1997/ |
S. Horita, T. Naruse, M. Watanabe,
and A. Masuda |
Interface Control of
Pb(ZrxTi1-x)O3 Thin Film on Silicon Substrate with
Hetero-epitaxial Yttria-Stabilized Zirconia(YSZ)
Buffer Layer |
Appl. Surf. Sci.,
Vol. 117/118, pp. 429-433. |
|
1997/6 |
S. Horita, M. Watanabe, S. Umemoto,
and A. Masuda |
Material Properties
of Heteroepitaxial Yttria-Stabilized
Zirconia Films with Controlled Y Content on Si Prepated
by Reactive Sputtering |
The 4th Proc. the
4th Inter. Symp. on Sputtering & Plasma
Processes, pp. 163-168, Kanazawa Institure of Technology, Kanaza,
Japan. |
|
1996/ |
S. Horita, Y. Abe, and |
Heteroepitaxial Growth of Yttria-stabilized Zirconia Film on Oxidized Silicon by
Reactive Sputtering |
Thin Solid Films,
Vol. 281-282, pp. 28-31. |
|
1996/10 |
S. Horita, T.Kawada, and |
Characterization of Pb(ZrxTi1-x)O3 Thin Film on Silicon Substrate with Heteroepitaxial Yttria-Stabilized
Zirconia(YSZ) Buffer Layer |
Jpn. J. Appl. Phys.,
Vol. 35, Pt. 2, No. 10B, pp. L1357-L1359. |
|
1996/1 |
S. Horita, H. Akahori, and |
Ion Incident Angle
Dependence of Material Properties of a ZrN Film on
Silicon Prepared by the Ion Assisted Deposition Method |
J. Vac. Sci. &
Technol. (A), Vol. 14, No. 1, pp. 203-209. |
|
1995/ |
S. Horita, M. Murakawa, and T. Fujiyama |
Heteroepitaxial Growth of Yttria-Stabilized Zirconia Film on Silicon by Reactive
Sputtering |
Jpn. J. Appl. Phys.,
Vol. 34, Pt. 1,No. 4A, pp. 1942-1946. |
|
1994/ |
S. Horita, M. Kobayashi, |
Material Properties
of ZrN Film on Silicon Prepared by Low-Energy
Ion-Assisted Deposition |
Surface and Coatings
Technology, Vol. 66, pp. 318-323. |
|
1994/5 |
S. Horita, H. Konishi, N. Miyabo, and T. Hata |
Determination of
Material Thermal Properties Using Photoacoustic
Signals Detected by a Transparent Transducer |
Jpn. J. Appl. Phys.,
Vol. 33, Pt. 1, No. 5B, pp. 3238-3245. |
|
1994/3 |
T. Hata, H. Matsuda, R. Ando, and S. Horita |
Studies on Positive
Ion Behavior in Reactive Sputtering of Yttria-Stabilized
Zirconia(YSZ) |
Jpn. J. Appl. Phys.,
Vol. 33, Pt. 2,No. 3B, pp. L455-L458. |
|
1993/ |
I. Manic, S. Horita, and T. Hata |
Preparation of
stoichiometric Bi-Sr-Ca-Cu-O superconducting thin
films by RF diode sputtering |
Micoroelectronicd Journal, Vol. 24,
pp. 675-687. |
|
1993/ |
S. Horita, T. Tajima, |
Improvement of the
Crystalline Quality of a Yttria-Stabilized Zirconia
Film on Silicon by New Deposition Process in Reactive Sputtering |
Thin Solid Films,
Vol. 229, pp. 17-23. |
|
1993/ 9,10 |
S. Horita, T. Tujikawa, |
Material Properties
of a ZrNx Film on Silicon Prepared by Ion Assisted
Deposition Method |
J. Vac. Sci. &
Technol. (A), Vol. 11, No .5, pp. 2452-2457. |
|
1993/5 |
T. Hata, K. Takahashi, and |
Study on Differential
Photothermal Deflection Spectroscopy(PDS)
Considering the Intensity Profile of a Probe Beam |
Jpn. J. Appl. Phys.,
Vol. 32, Pt. 1, No. 5B, pp. 2557-2560. |
|
1993/5 |
S. Horita, S. Saikawa, H. Konishi, and T. Hata |
Analysis of Pyroelectric Signal in PAS Using a Transparent Transducer |
Jpn. J. Appl. Phys.,
Vol. 32, Pt. 1, No. 5B, pp. 2561-2566. |
|
1992/ |
T. Hata, M. Ishimaru, and |
Optical and Thermal
Evaluation of Semiconductor by Differential Photothermal
Deflection Spectroscopy |
Proc. the 12th Symp. on Ultrasonic Electronics, Jpn.
J. Appl. Phys., Vol. 31, Suppl. 31-1, pp. 155-157. |
|
1992/ |
S. Horita, T. Saikawa, and T. Hata |
Influence of
Piezoelectric and Pyroelectric Effects on Signal of
PAS Using a Transparent Transducer |
Proc. the 12th Symp. on Ultrasonic Electronics, Jpn.
J. Appl. Phys., Vol. 31, Suppl. 31-1, pp. 152-154. |
|
1992/3 |
S. Horita, E. Miyagoshi, M. Ishimaru, and T. Hata |
Improvement of
Sensitivity of Photothermal Deflection Spectroscopy
by a Double Pass Method |
Rev. Sci. Instrum., Vol. 63, No. 3, pp. 1909-1913. |
|
1991/ |
S. Horita, S. Yagi, and T. Hata |
Theoretical Analysis
of Photoacoustic Signal on PAS Using a Transparent
Transducer |
Proc. the 11th Symp. on Ultrasonic Electronics, Jpn.
J. Appl. Phys., Vol. 30, Suppl. 30-1, pp. 286-288. |
|
1991/8 |
S. Horita, T. Tajima, and T. Hata |
Heteroepitaxial Growth of YSZ Films
on Silicon by Reactive Sputtering |
Proc. 10th Inter. Symp. on Plasma Chemistry, Vol. 3, No. 2.4-1, pp. 1-6. |
|
1990/ |
S. Horita, T. Tsujiguchi, |
Heteroepitaxial Growth of Yttria-Stabilized Zirconia Films on Silicon by Plasma
Controlled Magnetron Sputtering |
Proc. C-MRS
"Thin Films and Beam-Solid Interactions", Vol. 4, pp. 27-32. |
|
1990/ |
S. Horita, S.Yagi, and T.Hata |
Consideration on PA
Signals of Multilayer Structure Measured by PAS Using Transparent Transducer |
Proc. the 10th Symp. on Ultrasonic Electronics, Jpn.
J. Appl. Phys., Vol. 29, Suppl.29-1, pp. 274-276. |
|
1990/9 |
S. Horita, K. Fukao, and H. Ishiwara |
Study of Subboundary Generation in Silicon-on-Insulator Films
Recrystallized by a Pseudoline Electron Beam |
J. Appl. Phys., Vol.
68, No. 6, pp. 2769-2775. |
|
1989/12 |
T. Hata, M. Tsuchitani, K. Kamiya, and S. Horita |
Reduction of
Internal Stress by Compositional
Gradient Layer Inserted between TiSi2 and Si |
Jpn. J. Appl. Phys.,
Vol. 28, No. 12, pp. L2297-L2300. |
|
1989/7 |
S. Horita, S. Adachi, S. Yagi, and T.Hata |
Evaluation of
Multilayer Structure by Photoacoustic
Spectroscopy(PAS) Using Transparent Transducer |
Conf. Digest 6th Inter. Topical Meeting
on Photoacoustic and Photothermal
Phenomena, pp. 380-381. |
|
1989/7 |
堀田 将、宮越英司、 |
光熱偏光分光法(PDS)によるイオン注入Si基板の評価 |
電子情報通信学会論文誌, C-Ⅲ､Vol. J72-C-Ⅲ､No. 7, pp. 763-769. |
|
1989/3 |
S. Horita and H. Ishiwara |
Consideration on the
Void Generation Mechanism in Electron-Beam Recrystal-lized
Silicon-on-Insulator Film |
J. Appl. Phys., Vol.
65, No. 5, pp. 2057-2063. |
|
1989/2 |
S. Horita and H. Ishiwara |
Pseudoline Electron Beam
Recrystallization of Silicon-on-Insulator |
Materials Science
Report, Vol. 3, No. 5, 6, pp. 217-275. |
|
1989/
|
T.Hata, S. Adachi, and |
Evaluation of Multilayer Structure and
Depth Profile by PAS Using a Transparent Transducer |
Proc. the 9th Symp. on Ultrasonic Electronics, Jpn.
J. Appl. Phys., Vol. 28, Suppl. 28-1, pp. 243-245. |
|
1988/ |
T. Hata, K. Kamiya, Y. Kamide, and S. Horita |
Fabrication of Superlattice Structures by Plasma Controlled Magnetron
Sputtering |
Thin Solid Films,
Vol. 163, pp. 467-473. |
|
1988/ |
T. Hata, K. Yago, S. Adachi, and S.
Horita |
Evaluation of Ion
Implantation into Silicon by Photoacoustic
Spectroscopy Using Transparent Transducer Method |
Proc. the 8th Symp. on Ultrasonic Electronics, Jpn.
J. Appl. Phys., Vol .27, Suppl. 27-1, pp .232-234. |
|
1987/9 |
T. Hata K. Kamiya, and |
New Method to
Control Composition of Alloy Films by Plasma Controlled Magnetron Sputtering |
Proc. the 8th Inter.
Symp. on Plasma Chemistry, Vol. 2, pp. 921-926. |
|
1987/3 |
S. Horita and H. Ishiwara |
Perforation Seed
Structure in Electron-Beam Recrystallized Silicon-on-Insulator Films |
Appl. Phys. Lett., Vol. 50, No. 12, pp. 748-750. |
|
1987/2 |
S. Horita and H. Ishiwara |
Characterization of
Silicon-on-Insulator Films Recrystallized by an Obliquely Scanned Pseudo-Line
Electron Beam |
J. Appl. Phys., Vol.
61, No. 3, pp. 1006-1014. |
|
1986/10 |
S. Horita and H. Ishiwara |
Influence of the
Shape of a Scanned Pseudo-Line Electron Beam on Recrystal-lization
Characteristics of SOI Structures |
Proc. the Inter.
Conf. Semiconductor and Integrated Technology, pp. 625-627 |
|
1986/8 |
S. Horita and H. Ishiwara |
Characterization of Subgrain Boundaries in Laterally Seeded Epitaxial SOI
Films Recrystallized by an Electron Beam |
Ext. Abs. the 18th
Inter. Conf. Solid State Device and Materials, pp. 573-576. |
|
1985/8 |
S. Horita and H. Ishiwara |
Recrystallization of
SOI Structures by a 2-Dimensionally Scanned Pseudo-Line Electron Beam |
Ext. Abs. the 17th
Conf. Solid State Device and Materials, pp. 131-134. |
|
1985/5 |
H. Ishiwara and S. Horita |
Formation of Shallow
p+n Junctions by B-Ion Implantation in
Si Substrates with Amorphous Layers |
Jpn. J. Appl. Phys., Vol .24, No. 5, pp. 565-573. |
|
1985/2 |
H. Ishiwara, K. Ohyu, |
Recrystallization of
Silicon-on-Insulator Structures by Sinusoidally-Scanned
Electron Beams |
Jpn. J.Appl. Phys.,
Vol. 24, No .2, pp. 126-132. |
|
1984/6 |
S. Horita and H. Ishiwara |
Furnace and
Electron-Beam Annealing B Implanted Amorphous Si |
Proc. the 8th Symp. on Ion Source and Ion-Assisted Technology, pp.
405-408 |
|
論文発表（古いもの順） |
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|
1987/3 |
学位論文；高速走査電子ビームによるSOI構造作製に関する研究 |
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|
2009/ |
Sukreen Hana Herman and
Susumu Horita |
Low-temperature
Fabrication of a Crystallized Si Film Deposited on a Glass Substrate using an
Yttria-stabilized Zirconia Seed Layer |
Mat. Res. Soc. Symp. Proc., Vo. 1153, pp.77-82 |