Title:
Formation of thermally stable amorphous silicon passivation films using liquid silicon

Speaker:
Guo Cheng (JAIST)

Abstract:
We apply liquid-source vapor deposition (LVD) to form amorphous silicon (a-Si) passivation films on crystalline Si (c-Si) using the vapor of cycropentasilane (CPS), and investigate their thermal stability against post-annealing. LVD a-Si passivation films show high initial effective minority carrier lifetime (τeff) of >300 μs and have better thermal stability than a reference plasma-enhanced chemical-vapor-deposited (PECVD) sample. The high thermal stability of LVD a-Si films may be because of considerably high deposition temperature at 360 °C or more. We also confirm that the epitaxial growth of Si films does not occur on crystalline Si (c-Si) even at such high deposition temperatures and LVD can realize the simultaneous deposition of a-Si films on both sides of c-Si wafers.