Title:
Direct Growth of Graphene on Nickel Electrode at Low Temperature

Speaker(s):
Haslinawati Mohd Mustapha, Mohd Ambri Mohamed, Azrul Azlan Hamzah, B.Y. Majlis

Institute of Microengineering and Nanoelectronics (IMEN)
Universiti Kebangsaan Malaysia, 43600 UKM Bangi, Selangor, Malaysia
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Abstract:
Graphene has become attractive material because of its wide range of potential application. One of the concern to utilize this application is for industrial needs, which requires a large scale of high quality graphene directly on substrate without encounter any transfer process that will lead to device performance deterioration. Plasma Enhanced Chemical Vapor Deposition (PECVD) technique offered a good features in shortening the growth time and lowering the temperature therefore make this technique the most suitable approach. In this regard, we demonstrate a direct growth of graphene on Nickel (Ni) electrode deposited on Si substrate. The characterization was carried out by 3D Optical Microscopy, Scanning Electron Microscopy, Raman Spectroscopy and Atomic Force Microscopy. The Raman spectra reveal a strong G band and D band at 1600 cm^-1 and 1360 cm^-1, respectively. A 2D band appeared at 2724 cm^-1. The relative intensity of bands 2D and G, (I_2D/I_G) discovered the sample was multilayer graphene.