Title:
Organic nonvolatile resistive memory devices with helical polyisocyanide bearing oligothiophene

Speaker(s):
Yasushi Sakuragawa¹, Yuugaku Takagi², Tomoyuki Ikai², Katsuhiro Maeda², Toan Thanh Dao³ Heisuke Sakai¹, Hideyuki Murata^1
1 Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa, 923-1292, Japan
² Kanazawa University, Kakuma, Kanazawa, 920-1192, Japan
³ University of Transport and Communications, Dong Da, Hanoi, Vietnam
E-mail: This email address is being protected from spambots. You need JavaScript enabled to view it.

Abstract:
Nonvolatile resistive memory devices using organic materials as an active layer have been attracted considerable attention as a promising candidate for an alternative to established inorganic memory devices. [1] We have reported that the memory devices employing polyisocyanides as an active layer exhibit excellent memory characteristics. [2] However, the operation mechanism of the memory characteristics remains unclear. In this study, we investigate the effect of a side chain unit in polyisosyanides on the memory characteristics.

The chemical structures of the polyisocyanides (Poly-7, Poly-D) and the device structure of the memory device are shown in Fig. 1. The memory device using Poly-7 only shows bipolar switching behavior (Fig. 2). This result indicates that the oligothiophene unit plays indispensable role to realize the resistive switching behavior. At the high current state, since the current density-voltage curve obeys ohmic conduction, we suspect that the metallic conduction paths are formed in the memory device.

Figures

[1] Y. Li and Y. Shen, Polym. Eng. Sci., 54, 2470 (2014).
[2] Y. Sakuragawa, Y. Takagi, T. Ikai, H. Sakai and H. Murata, The 75th JSAP Autumn Meeting, Extended Abstracts, pp.157 (2014)