Title:
In-plane Transport Properties of MBE grown MnAs/InAs on GaAs(111)B

Speaker(s):
Md. Earul Islam^a, Cong Thanh Nguyen, Masashi Akabori^b

Center for Nano Materials and Technology (CNMT), Japan Advanced Institute of Science and Technology (JAIST), 1-1 Asahidai, Nomi, Ishikawa 923-1292, JAPAN
^a E-mail: Islam (This email address is being protected from spambots. You need JavaScript enabled to view it.), ^b E-mail: M. Akabori (This email address is being protected from spambots. You need JavaScript enabled to view it.)

Abstract:
We have grown MnAs/InAs hybrid structure on semi-insulating GaAs(111)B by molecular beam epitaxy (MBE). MnAs and InAs are for ferromagnetic electrodes and for semiconducting channels respectively, in spintronic device applications. In Hall measurements using van der Pauw geometry, InAs shows n-type conduction, and MnAs/InAs shows p-type conduction with relatively high sheet carrier concentration. It seems the n-type conduction of InAs layer hided by the p-type conduction of MnAs. In in-plane transmission line model (TLM) measurements, we confirmed good Ohmic behavior and well conduction between MnAs/InAs interface. However, we also found degraded sheet resistance of InAs channel in the TLM devices.